Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US13361988Application Date: 2012-01-31
-
Publication No.: US08384601B2Publication Date: 2013-02-26
- Inventor: Kazuya Hanaoka , Hideto Ohnuma , Teruyuki Fujii
- Applicant: Kazuya Hanaoka , Hideto Ohnuma , Teruyuki Fujii
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Fish & Richardson P.C.
- Priority: JP2007-105395 20070413
- Main IPC: H01Q1/38
- IPC: H01Q1/38

Abstract:
An object of the present invention is to prevent electrical characteristics of circuit elements from being adversely affected by copper diffusion in a semiconductor device having an integrated circuit and an antenna formed over one substrate, which uses copper plating for the antenna. Another object is to prevent a defect of a semiconductor device due to poor connection between an antenna and an integrated circuit in a semiconductor device having the integrated circuit and the antenna formed over one substrate. In a semiconductor device having an integrated circuit 100 and an antenna 101 formed over one substrate 102, when a copper plating layer 108 is used for a conductor of the antenna 101, it is possible to decrease an adverse effect on electrical characteristics of circuit elements due to copper diffusion because a base layer 107 of the antenna 101 uses a nitride film of a predetermined metal.
Public/Granted literature
- US20120193435A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-08-02
Information query