Invention Grant
US08384817B2 Solid-state imager, method of manufacturing the same, and camera 有权
固态成像仪,制造方法和相机

  • Patent Title: Solid-state imager, method of manufacturing the same, and camera
  • Patent Title (中): 固态成像仪,制造方法和相机
  • Application No.: US12619292
    Application Date: 2009-11-16
  • Publication No.: US08384817B2
    Publication Date: 2013-02-26
  • Inventor: Hideshi Abe
  • Applicant: Hideshi Abe
  • Applicant Address: JP Tokyo
  • Assignee: Sony Corporation
  • Current Assignee: Sony Corporation
  • Current Assignee Address: JP Tokyo
  • Agency: SNR Denton US LLP
  • Priority: JP2008-293314 20081117; JP2009-060761 20090313
  • Main IPC: H04N5/225
  • IPC: H04N5/225 G02B13/16
Solid-state imager, method of manufacturing the same, and camera
Abstract:
A solid-state imager includes a photoelectric conversion region for photoelectrically converting a light beam received on a light receiving surface thereof into a signal charge and a waveguide path for guiding the light beam to the light receiving surface. The waveguide path includes a plurality of waveguide members, each waveguide member guiding a light beam incident on a light incident surface thereof to a light output surface thereof. The plurality of waveguide members are laminated on the light receiving surface. A first waveguide member closest to the light receiving surface from among the plurality of waveguide members faces the light receiving surface and is smaller in area than a light incident surface of a second waveguide member farthest from the light receiving surface from among the plurality of waveguide members.
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