Invention Grant
US08385026B2 Tunneling magnetoresistive (TMR) read head with low magnetic noise
有权
具有低磁噪声的隧道磁阻(TMR)读头
- Patent Title: Tunneling magnetoresistive (TMR) read head with low magnetic noise
- Patent Title (中): 具有低磁噪声的隧道磁阻(TMR)读头
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Application No.: US12545776Application Date: 2009-08-21
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Publication No.: US08385026B2Publication Date: 2013-02-26
- Inventor: Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- Applicant: Matthew J. Carey , Jeffrey R. Childress , Stefan Maat
- Applicant Address: NL Amsterdam
- Assignee: HGST Netherlands B.V.
- Current Assignee: HGST Netherlands B.V.
- Current Assignee Address: NL Amsterdam
- Agent Thomas R. Berthold
- Main IPC: G11B5/33
- IPC: G11B5/33

Abstract:
A tunneling magnetoresistance (TMR) device, like a TMR read head for a magnetic recording disk drive, has low magnetic damping, and thus low mag-noise, as a result of the addition of a ferromagnetic backing layer to the ferromagnetic free layer. The backing layer is a material with a low Gilbert damping constant or parameter α, the well-known dimensionless coefficient in the Landau-Lifshitz-Gilbert equation. The backing layer may have a thickness such that it contributes up to two-thirds of the total moment/area of the combined free layer and backing layer. The backing layer may be formed of a material having a composition selected from (CoxFe(100-x))(100-y)Xy, (Co2Mn)(100-y)Xy and (Co2FexMn(1-x))(100-y)Xy, where X is selected from Ge, Al and Si, and (Co2Fe)(100-y)Aly, where y is in a range that results in a low damping constant for the material.
Public/Granted literature
- US20110043950A1 TUNNELING MAGNETORESISTIVE (TMR) READ HEAD WITH LOW MAGNETIC NOISE Public/Granted day:2011-02-24
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