Invention Grant
- Patent Title: Semiconductor memory device which stores plural data in a cell
-
Application No.: US13413779Application Date: 2012-03-07
-
Publication No.: US08385130B2Publication Date: 2013-02-26
- Inventor: Noboru Shibata , Tomoharu Tanaka
- Applicant: Noboru Shibata , Tomoharu Tanaka
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2004-024475 20040130; JP2004-160165 20040528
- Main IPC: G11C16/04
- IPC: G11C16/04

Abstract:
A memory cell array is configured to have a plurality of memory cells arranged in a matrix, each of the memory cells being connected to a word line and a bit line and being capable of storing n values (n is a natural number equal to or larger than 3). A control circuit controls the potentials of the word line and bit line according to input data and writes data into a memory cell. The control circuit writes data into the memory cell to a k-valued threshold voltage (k
Public/Granted literature
- US20120163091A1 SEMICONDUCTOR MEMORY DEVICE WHICH STORES PLURAL DATA IN A CELL Public/Granted day:2012-06-28
Information query