Invention Grant
US08386696B2 Methods of writing partial page data in a non-volatile memory device
有权
在非易失性存储器件中写入局部页面数据的方法
- Patent Title: Methods of writing partial page data in a non-volatile memory device
- Patent Title (中): 在非易失性存储器件中写入局部页面数据的方法
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Application No.: US12069764Application Date: 2008-02-13
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Publication No.: US08386696B2Publication Date: 2013-02-26
- Inventor: Jin-hyuk Kim , Chang-eun Choi , Young-gon Kim
- Applicant: Jin-hyuk Kim , Chang-eun Choi , Young-gon Kim
- Applicant Address: KR
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR
- Agency: Myers Bigel Sibley & Sajovec, P.A.
- Priority: KR10-2007-0015091 20070213
- Main IPC: G06F12/00
- IPC: G06F12/00 ; G06F13/00 ; G06F13/28

Abstract:
A method of writing partial page data in a non-volatile memory device includes, reading data from a second block when the size of a last page of data to be written in a page of a first block is smaller than a size of the page of the first block, wherein a size of the read data is given by the size of the page of the first block minus the size of the last page of data; storing together data of the last page and the data read from the second block in a buffer; and writing the data stored in the buffer in the first block.
Public/Granted literature
- US20080195804A1 Methods of writing partial page data in a non-volatile memory device Public/Granted day:2008-08-14
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