Invention Grant
US08386861B2 Non-volatile memory and method with post-write read and adaptive re-write to manage errors 有权
非易失性存储器和具有后写入读取和自适应重写的方法来管理错误

  • Patent Title: Non-volatile memory and method with post-write read and adaptive re-write to manage errors
  • Patent Title (中): 非易失性存储器和具有后写入读取和自适应重写的方法来管理错误
  • Application No.: US13540279
    Application Date: 2012-07-02
  • Publication No.: US08386861B2
    Publication Date: 2013-02-26
  • Inventor: Jian Chen
  • Applicant: Jian Chen
  • Applicant Address: US TX Plano
  • Assignee: SanDisk Corporation
  • Current Assignee: SanDisk Corporation
  • Current Assignee Address: US TX Plano
  • Agency: Davis Wright Tremaine LLP
  • Main IPC: G06F11/00
  • IPC: G06F11/00
Non-volatile memory and method with post-write read and adaptive re-write to manage errors
Abstract:
Data errors in non-volatile memory inevitably increase with usage and with higher density of bits stored per cell. For acceptable quality assurance, conventional error correction codes (“ECC”) have to correct a maximum number of error bits up to the far tail end of a statistical population. The present memory is configured to have a first portion operating with less error but of lower density storage, and a second portion operating with a higher density but less robust storage. If excessive error bits (at the far tail-end) occur after writing a group of data to the second portion, the data is adaptively rewritten to the first portion which will produce less error bits. Preferably, the data is initially written to a cache also in the first portion to provide source data for any rewrites. Thus, a more efficient ECC not requiring to correcting for the far tail end can be used.
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