Invention Grant
- Patent Title: Asymmetrical wafer configurations and method for creating the same
- Patent Title (中): 不对称晶片配置及其制作方法
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Application No.: US11756899Application Date: 2007-06-01
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Publication No.: US08389099B1Publication Date: 2013-03-05
- Inventor: Michael W Matthews , Sunil B. Phatak
- Applicant: Michael W Matthews , Sunil B. Phatak
- Applicant Address: US IL Bensenville
- Assignee: Rubicon Technology, Inc.
- Current Assignee: Rubicon Technology, Inc.
- Current Assignee Address: US IL Bensenville
- Agency: McGuireWoods, LLP
- Main IPC: B32B3/02
- IPC: B32B3/02 ; H01L23/544 ; H01L29/30

Abstract:
The present invention consists of a method for imparting asymmetry to a truncated annular wafer by either rounding one corner of the orientation flat, or rounding one corner of a notch. This novel method of rounding corners impart a visual and/or tactile asymmetry which can be utilized by a person in order to differentiate between the two different sides of the wafer. This inventive wafer design and method for making an asymmetric wafer is especially useful in the field of semiconductor technology and may be used on sapphire crystal wafers or any other class of wafer.
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