Invention Grant
- Patent Title: Pattern forming method
- Patent Title (中): 图案形成方法
-
Application No.: US12618365Application Date: 2009-11-13
-
Publication No.: US08389200B2Publication Date: 2013-03-05
- Inventor: Shinichi Kanna , Haruki Inabe , Hiromi Kanda
- Applicant: Shinichi Kanna , Haruki Inabe , Hiromi Kanda
- Applicant Address: JP Tokyo
- Assignee: FUJIFILM Corporation
- Current Assignee: FUJIFILM Corporation
- Current Assignee Address: JP Tokyo
- Agency: Sughrue Mion, PLLC
- Priority: JPP2006-013978 20060123; JPP2006-157227 20060606
- Main IPC: G03F7/00
- IPC: G03F7/00 ; G03F7/004 ; G03F7/20 ; G03F7/40

Abstract:
A pattern forming method which uses a positive resist composition comprises: (A) a fluorine-free resin capable of increasing its solubility in an alkaline developer under action of an acid; (B) a compound capable of generating an acid upon irradiation with an actinic ray or radiation; (C) a fluorine-containing resin having at least one group selected from the group consisting of (X) an alkali-soluble group, (XI) a group capable of decomposing under action of an alkali developer and increasing solubility of the resin (C) in an alkaline developer and (XII) a group capable of decomposing under action of an acid and increasing solubility of the resin (C) in an alkaline developer; and (D) a solvent, the method comprising: (i) a step of applying the positive resist composition to a substrate to form a resist coating; (ii) a step of exposing the resist coating to light via an immersion liquid; (iii) a step of removing the immersion liquid remaining on the resist coating; (iv) a step of heating the resist coating; and (v) a step of developing the resist coating.
Public/Granted literature
- US20100068661A1 PATTERN FORMING METHOD Public/Granted day:2010-03-18
Information query