Invention Grant
US08389314B2 MEMS device with roughened surface and method of producing the same
有权
具有粗糙表面的MEMS器件及其制造方法
- Patent Title: MEMS device with roughened surface and method of producing the same
- Patent Title (中): 具有粗糙表面的MEMS器件及其制造方法
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Application No.: US11538281Application Date: 2006-10-03
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Publication No.: US08389314B2Publication Date: 2013-03-05
- Inventor: John R. Martin , Thomas D. Chen , Jinbo Kuang , Thomas Kieran Nunan , Xin Zhang
- Applicant: John R. Martin , Thomas D. Chen , Jinbo Kuang , Thomas Kieran Nunan , Xin Zhang
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Sunstein Kann Murphy & Timbers LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A method of producing a MEMS device provides a MEMS apparatus having released structure. The MEMS apparatus is formed at least in part from an SOI wafer having a first layer, a second layer spaced from the first layer, and an insulator layer between the first layer and second layer. The first layer has a top surface, while the second layer has a bottom surface facing the top surface. After providing the MEMS apparatus, the method increases the roughness of at least the top surface of the first layer or the bottom surface of the second layer.
Public/Granted literature
- US20080081391A1 MEMS Device with Roughened Surface and Method of Producing the Same Public/Granted day:2008-04-03
Information query
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