A method of producing a thin film photovoltaic system (2) having a two-dimensional metal chalcogenide compound semiconductor layer (7) as an absorber of sunlight and a metal layer (8) applied to the metal chalcogenide compound semiconductor layer is provided, wherein the metal chalcogenide compound semiconductor layer (7) and the metal layer (8) form a Schottky contact at their contact face. The method is characterized in that the metal chalcogenide compound semiconductor layer (7) is produced by applying a dispersion containing nanoscale particles having a diameter of about 3 nm to about 30 nm to a transparent substrate material (12), wherein the layer thickness of the metal chalcogenide compound semiconductor layer (7) applied to the substrate material ranges from about 150 nm to about 2500 nm.