Invention Grant
US08389320B2 Method for fracturing semiconductor substrate, method for fracturing solar cell, and the solar cell
有权
破碎半导体衬底的方法，压裂太阳能电池的方法和太阳能电池
- Patent Title: Method for fracturing semiconductor substrate, method for fracturing solar cell, and the solar cell
- Patent Title (中): 破碎半导体衬底的方法，压裂太阳能电池的方法和太阳能电池
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Application No.: US12046534Application Date: 2008-03-12
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Publication No.: US08389320B2Publication Date: 2013-03-05
- Inventor: Hiroyuki Kannou , Masaki Shima
- Applicant: Hiroyuki Kannou , Masaki Shima
- Applicant Address: JP Moriguchi
- Assignee: Sanyo Electric Co., Ltd.
- Current Assignee: Sanyo Electric Co., Ltd.
- Current Assignee Address: JP Moriguchi
- Agency: Mots Law, PLLC
- Agent Marvin A. Motsenbocker
- Priority: JP2007-072085 20070320
- Main IPC: H01L21/00
- IPC: H01L21/00 ; H01L31/00
Abstract:
In accordance with the present invention, the dividing grooves 8 are formed so as not to be parallel to cleavage planes of the semiconductor substrate 1, and the semiconductor substrate 1 is bent along the dividing grooves 8, whereby the semiconductor substrate 1 is fractured along the dividing grooves 8.
Public/Granted literature
- US20080230115A1 METHOD FOR FRACTURING SEMICONDUCTOR SUBSTRATE, METHOD FOR FRACTURING SOLAR CELL, AND THE SOLAR CELL Public/Granted day:2008-09-25
Information query
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