Invention Grant
- Patent Title: Method of manufacturing semiconductor device
- Patent Title (中): 制造半导体器件的方法
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Application No.: US13235247Application Date: 2011-09-16
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Publication No.: US08389339B2Publication Date: 2013-03-05
- Inventor: Yusuke Tanuma , Toshikazu Ishikawa
- Applicant: Yusuke Tanuma , Toshikazu Ishikawa
- Applicant Address: JP Kawasaki-shi
- Assignee: Renesas Electronics Corporation
- Current Assignee: Renesas Electronics Corporation
- Current Assignee Address: JP Kawasaki-shi
- Agency: Miles and Stockbridge P.C.
- Priority: JP2010-222438 20100930
- Main IPC: H01L21/58
- IPC: H01L21/58

Abstract:
It is aimed at improving the reliability of a semiconductor device.In a POP having an upper package stacked on a lower package, an opening of a first solder resist film in a first region between a first group of lands arranged at the periphery of an front surface of a wiring substrate of the lower package and a second group of lands arranged in a central part is filled with a second solder resist film, and thereby the formation of a starting point of cracks in the opening becomes unlikely to suppress occurrence of cracks and improve the reliability of the POP.
Public/Granted literature
- US20120083073A1 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE Public/Granted day:2012-04-05
Information query
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