- Patent Title: Methods of manufacturing oxide semiconductor thin film transistor
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Application No.: US12659148Application Date: 2010-02-26
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Publication No.: US08389344B2Publication Date: 2013-03-05
- Inventor: Jisim Jung , Youngsoo Park , Sangyoon Lee , Changjung Kim , Taesang Kim , Jangyeon Kwon , Kyungseok Son
- Applicant: Jisim Jung , Youngsoo Park , Sangyoon Lee , Changjung Kim , Taesang Kim , Jangyeon Kwon , Kyungseok Son
- Applicant Address: KR Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Gyeonggi-Do
- Agency: Harness, Dickey & Pierce, P.L.C.
- Priority: KR10-2008-0053128 20080605
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Provided is a method of manufacturing an oxide semiconductor thin film transistor using a transparent oxide semiconductor as a material for a channel. The method of manufacturing the oxide semiconductor thin film transistor includes forming a passivation layer on a channel layer and performing an annealing process for one hour or more at a temperature of about 100° C. or above.
Public/Granted literature
- US20100159642A1 Methods of manufacturing oxide semiconductor thin film transistor Public/Granted day:2010-06-24
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