Memory cell formed using a recess and methods for forming the same

Invention Grant

US08389375B2 Memory cell formed using a recess and methods for forming the same 有权

Title translation: 使用凹部形成的记忆单元及其形成方法

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Patent Title: Memory cell formed using a recess and methods for forming the same
Patent Title (中): 使用凹部形成的记忆单元及其形成方法
Application No.: US12703907

Application Date: 2010-02-11
Publication No.: US08389375B2

Publication Date: 2013-03-05
Inventor: Steven Maxwell
Applicant: Steven Maxwell
Applicant Address: US CA Milpitas
Assignee: SanDisk 3D LLC
Current Assignee: SanDisk 3D LLC
Current Assignee Address: US CA Milpitas
Agency: Dugan & Dugan, PC
Main IPC: H01L29/93
IPC: H01L29/93 ; G11C11/21

Memory cell formed using a recess and methods for forming the same

Abstract:

In a first aspect, a method of forming a memory cell is provided, the method including: (1) forming a pillar above a substrate, the pillar comprising a steering element and a metal hardmask layer; (2) selectively removing the metal hardmask layer to create a void; and (3) forming a carbon-based switching material within the void. Numerous other aspects are provided.

Abstract(Chinese):

在第一方面，提供了形成存储单元的方法，所述方法包括：（1）在基板上形成柱，所述柱包括转向元件和金属硬掩模层; （2）选择性地去除金属硬掩模层以产生空隙; 和（3）在空隙内形成碳基开关材料。提供了许多其他方面。

Public/Granted literature

US20110193042A1 MEMORY CELL FORMED USING A RECESS AND METHODS FOR FORMING THE SAME Public/Granted day:2011-08-11

Information query

Espacenet

IPC分类:

H	电学
H01	基本电气元件
H01L	半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L29/00	专门适用于整流、放大、振荡或切换，并具有至少一个电位跃变势垒或表面势垒的半导体器件；具有至少一个电位跃变势垒或表面势垒，例如PN结耗尽层或载流子集结层的电容器或电阻器；半导体本体或其电极的零部件（H01L31/00至H01L47/00，H01L51/05优先；除半导体或其电极之外的零部件入H01L23/00；由在一个共用衬底内或其上形成的多个固态组件组成的器件入H01L27/00）
H01L29/66	.按半导体器件的类型区分的
H01L29/86	..只能通过对一个或多个通有待整流，放大、振荡或切换的电流的电极供给电流的变化或施加电位的变化方可进行控制的（H01L29/96优先）
H01L29/92	...有电位跃变势垒或表面势垒的电容器
H01L29/93	....电容量可变的二极管，例如变容二极管