Invention Grant
- Patent Title: Electrode structure for use in electronic device and method of making same
- Patent Title (中): 用于电子设备的电极结构及其制造方法
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Application No.: US11358718Application Date: 2006-02-22
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Publication No.: US08389852B2Publication Date: 2013-03-05
- Inventor: Alexey Krasnov
- Applicant: Alexey Krasnov
- Applicant Address: US MI Auburn Hills
- Assignee: Guardian Industries Corp.
- Current Assignee: Guardian Industries Corp.
- Current Assignee Address: US MI Auburn Hills
- Agency: Nixon & Vanderhye P.C.
- Main IPC: H01L31/00
- IPC: H01L31/00

Abstract:
An electrode structure is provided for use in an electronic device. In certain example embodiments, an electrode structure includes a supporting glass substrate (e.g., soda-lime silica based float glass), a buffer layer (e.g., SixNy), and a conductive electrode (e.g., Mo) provided in this order. The buffer layer is advantageous in that it prevents or reduces sodium (Na) migration from the glass substrate into semiconductor layer(s) of the electronic device.
Public/Granted literature
- US20070193623A1 Electrode structure for use in electronic device and method of making same Public/Granted day:2007-08-23
Information query
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