Invention Grant
- Patent Title: Electrode structure adapted for high applied voltage and fabrication method thereof
- Patent Title (中): 适用于高施加电压的电极结构及其制造方法
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Application No.: US12511711Application Date: 2009-07-29
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Publication No.: US08389872B2Publication Date: 2013-03-05
- Inventor: Chen Hsu , Chih-Ming Hu , Chun-Yen Lin , Wen-Sheng Lin , Shih-Chieh Jang
- Applicant: Chen Hsu , Chih-Ming Hu , Chun-Yen Lin , Wen-Sheng Lin , Shih-Chieh Jang
- Applicant Address: TW Taipei
- Assignee: Hermes-Epitek Corp.
- Current Assignee: Hermes-Epitek Corp.
- Current Assignee Address: TW Taipei
- Agency: Muncy, Geissler, Olds & Lowe, PLLC
- Main IPC: H05K1/11
- IPC: H05K1/11

Abstract:
An electrode structure adapted for high applied voltage is provided, which comprises a conductive plate substrate and a covering layer disposed thereon such that a covering percentage of the covering layer over the conductive plate substrate is more than 50%. Since area of the conductive plate substrate covered by the covering layer is larger than the area exposed, the possibility of arcing is reduced and the breakdown voltage applied to the electrode structure may be increased.
Public/Granted literature
- US20110027615A1 ELECTRODE STRUCTURE ADAPTED FOR HIGH APPLIED VOLTAGE AND FABRICATION METHOD THEREOF Public/Granted day:2011-02-03
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