Invention Grant
US08389976B2 Methods of forming carbon nanotube transistors for high speed circuit operation and structures formed thereby
失效
形成用于高速电路操作的碳纳米管晶体管的方法和由此形成的结构
- Patent Title: Methods of forming carbon nanotube transistors for high speed circuit operation and structures formed thereby
- Patent Title (中): 形成用于高速电路操作的碳纳米管晶体管的方法和由此形成的结构
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Application No.: US11648209Application Date: 2006-12-29
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Publication No.: US08389976B2Publication Date: 2013-03-05
- Inventor: Arijit Raychowdhury , Ali Keshavarzi , Juanita Kurtin , Vivek De
- Applicant: Arijit Raychowdhury , Ali Keshavarzi , Juanita Kurtin , Vivek De
- Applicant Address: US CA Santa Clara
- Assignee: Intel Corporation
- Current Assignee: Intel Corporation
- Current Assignee Address: US CA Santa Clara
- Agency: Forefront IP Lawgroup, PLLC
- Main IPC: H01L29/06
- IPC: H01L29/06
Abstract:
Methods and associated structures of forming a microelectronic device are described. Those methods may comprise forming a channel region on a substrate, wherein the channel region comprises at least one CNT, forming at least one source/drain region adjacent the channel region, and then forming a gate electrode on the channel region, wherein a width of the gate electrode comprises about 50 percent to about 90 percent of a width of the contact region.
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