Invention Grant
- Patent Title: Method for forming semiconductor film, method for forming semiconductor device and semiconductor device
- Patent Title (中): 半导体膜形成方法，半导体器件形成方法及半导体器件
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Application No.: US13254429Application Date: 2010-03-01
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Publication No.: US08389996B2Publication Date: 2013-03-05
- Inventor: Hisato Yabuta , Nobuyuki Kaji , Ryo Hayashi
- Applicant: Hisato Yabuta , Nobuyuki Kaji , Ryo Hayashi
- Applicant Address: JP Tokyo
- Assignee: Canon Kabushiki Kaisha
- Current Assignee: Canon Kabushiki Kaisha
- Current Assignee Address: JP Tokyo
- Agency: Canon U.S.A., Inc., IP Division
- Priority: JP2009-053712 20090306
- International Application: PCT/JP2010/001383 WO 20100301
- International Announcement: WO2010/100885 WO 20100910
- Main IPC: H01L27/108
- IPC: H01L27/108 ; H01L29/00 ; H01L31/036
Abstract:
A method for forming a SnO-containing semiconductor film includes a first step of forming a SnO-containing film; a second step of forming an insulator film composed of an oxide or a nitride on the SnO-containing film to provide a laminated film including the SnO-containing film and the insulator film; and a third step of subjecting the laminated film to a heat treatment.
Public/Granted literature
- US20110309356A1 METHOD FOR FORMING SEMICONDUCTOR FILM, METHOD FOR FORMING SEMICONDUCTOR DEVICE AND SEMICONDUCTOR DEVICE Public/Granted day:2011-12-22
Information query
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