A light-emitting structure includes a p-doped region for injecting holes and an n-doped region for injecting electrons. At least one InGaN quantum well of a first type and at least one InGaN quantum well of a second type are arranged between the n-doped region and the p-doped region. The InGaN quantum well of the second type has a higher indium content than the InGaN quantum well of the first type.