Invention Grant
- Patent Title: Junction field effect transistor
- Patent Title (中): 结场效应晶体管
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Application No.: US12611055Application Date: 2009-11-02
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Publication No.: US08390039B2Publication Date: 2013-03-05
- Inventor: Derek Frederick Bowers , Andrew David Bain , Paul Malachy Daly , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuinness , Bernard Patrick Stenson , William Allan Lane
- Applicant: Derek Frederick Bowers , Andrew David Bain , Paul Malachy Daly , Anne Maria Deignan , Michael Thomas Dunbar , Patrick Martin McGuinness , Bernard Patrick Stenson , William Allan Lane
- Applicant Address: US MA Norwood
- Assignee: Analog Devices, Inc.
- Current Assignee: Analog Devices, Inc.
- Current Assignee Address: US MA Norwood
- Agency: Knobbe, Martens, Olson & Bear, LLP
- Main IPC: H01L29/80
- IPC: H01L29/80
Abstract:
A field effect transistor having a drain, a gate and a source, where the drain and source are formed by semiconductor regions of a first type, and in which a further doped region is provided intermediate the gate and the drain. Field gradients around the drain are thereby reduced.
Public/Granted literature
- US20110101423A1 JUNCTION FIELD EFFECT TRANSISTOR Public/Granted day:2011-05-05
Information query
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