Invention Grant
- Patent Title: ESD protection with increased current capability
- Patent Title (中): 具有增加电流能力的ESD保护
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Application No.: US12956686Application Date: 2010-11-30
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Publication No.: US08390071B2Publication Date: 2013-03-05
- Inventor: Rouying Zhan , Amaury Gendron , Chai Ean Gill
- Applicant: Rouying Zhan , Amaury Gendron , Chai Ean Gill
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agency: Ingrassia Fisher & Lorenz, P.C.
- Main IPC: H01L23/62
- IPC: H01L23/62 ; H01L21/8222
Abstract:
A stackable electrostatic discharge (ESD) protection clamp (21) for protecting a circuit core (24) comprises, a bipolar transistor (56, 58) having a base region (74, 51, 52, 85) with a base contact (77) therein and an emitter (78) spaced a lateral distance Lbe from the base contact (77), and a collector (80, 86, 762) proximate the base region (74, 51, 52, 85). The base region (74, 51, 52, 85) comprises a first portion (51) including the base contact (77) and emitter (78), and a second portion (52) with a lateral boundary (752) separated from the collector (86, 762) by a breakdown region (84) whose width D controls the clamp trigger voltage, the second portion (52) lying between the first portion (51) and the boundary (752). The damage-onset threshold current It2 of the ESD clamp (21) is improved by increasing the parasitic resistance Rbe of the emitter-base region (74, 51, 52, 85), by for example, increasing Lbe or decreasing the relative doping density of the first portion (51) or a combination thereof.
Public/Granted literature
- US20110175198A1 ESD PROTECTION WITH INCREASED CURRENT CAPABILITY Public/Granted day:2011-07-21
Information query
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