Invention Grant
- Patent Title: Quadrangle MOS transistors
- Patent Title (中): 四边形MOS晶体管
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Application No.: US12813379Application Date: 2010-06-10
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Publication No.: US08390078B2Publication Date: 2013-03-05
- Inventor: Shuo-Mao Chen , Chin-Chou Liu
- Applicant: Shuo-Mao Chen , Chin-Chou Liu
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Slater & Matsil, L.L.P.
- Main IPC: H01L27/085
- IPC: H01L27/085
Abstract:
A quadrangle transistor unit includes four transistor units. Each of the four transistor units includes a gate electrode. The gate electrodes of the four transistor units are aligned to four sides of a square. At least two of the four transistor units are connected in parallel.
Public/Granted literature
- US20110303984A1 Quadrangle MOS Transistors Public/Granted day:2011-12-15
Information query
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