Invention Grant
- Patent Title: Image sensor with deep trench isolation structure
- Patent Title (中): 具有深沟槽隔离结构的图像传感器
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Application No.: US12844642Application Date: 2010-07-27
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Publication No.: US08390089B2Publication Date: 2013-03-05
- Inventor: Szu-Ying Chen , Chun-Chieh Chuang , Jen-Cheng Liu , Dun-Nian Yaung
- Applicant: Szu-Ying Chen , Chun-Chieh Chuang , Jen-Cheng Liu , Dun-Nian Yaung
- Applicant Address: TW Hsin-Chu
- Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.
- Current Assignee Address: TW Hsin-Chu
- Agency: Haynes and Boone, LLP
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
Provided is a back side illuminated image sensor device. The image sensor device includes a substrate having a front side and a back side opposite the front side. The image sensor also includes a radiation-detection device that is formed in the substrate. The radiation-detection device is operable to detect a radiation wave that enters the substrate through the back side. The image sensor further includes a deep trench isolation feature that is disposed adjacent to the radiation-detection device. The image sensor device further includes a doped layer that at least partially surrounds the deep trench isolation feature in a conformal manner.
Public/Granted literature
- US20120025199A1 Image Sensor with Deep Trench Isolation Structure Public/Granted day:2012-02-02
Information query
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