Invention Grant
US08390093B1 System and method of galvanic isolation in digital signal transfer integrated circuits utilizing conductivity modulation of semiconductor substrate
有权
利用半导体衬底的电导率调制的数字信号传输集成电路中的电流隔离的系统和方法
- Patent Title: System and method of galvanic isolation in digital signal transfer integrated circuits utilizing conductivity modulation of semiconductor substrate
- Patent Title (中): 利用半导体衬底的电导率调制的数字信号传输集成电路中的电流隔离的系统和方法
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Application No.: US13230171Application Date: 2011-09-12
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Publication No.: US08390093B1Publication Date: 2013-03-05
- Inventor: Peter J. Hopper , Peter Smeys , William French , Andrei Papou , Aditi Dutt Chaudhuri
- Applicant: Peter J. Hopper , Peter Smeys , William French , Andrei Papou , Aditi Dutt Chaudhuri
- Applicant Address: US CA Santa Clara
- Assignee: National Semiconductor Corporation
- Current Assignee: National Semiconductor Corporation
- Current Assignee Address: US CA Santa Clara
- Agent Eugene C. Conser; Wade J. Brady, III; Frederick J. Telecky, Jr.
- Main IPC: H01L21/70
- IPC: H01L21/70 ; H01L21/00 ; H04B1/44
Abstract:
A galvanic isolation system provides galvanic isolation in digital transfer integrated circuits by using conductivity modulation of the semiconductor substrate. Modulation of the conductivity of the substrate affects eddy current losses of a (differential) RF inductor that is isolated from the substrate by a sufficient amount of dielectric material, which provides a basis for signal transfer from the modulated substrate to the inductor across the isolation barrier.
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