Invention Grant
- Patent Title: Semiconductor device and method of manufacturing the same
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US12331467Application Date: 2008-12-10
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Publication No.: US08390117B2Publication Date: 2013-03-05
- Inventor: Yoshiaki Shimizu , Yuichiro Yamada , Toshiyuki Fukuda
- Applicant: Yoshiaki Shimizu , Yuichiro Yamada , Toshiyuki Fukuda
- Applicant Address: JP Osaka
- Assignee: Panasonic Corporation
- Current Assignee: Panasonic Corporation
- Current Assignee Address: JP Osaka
- Agency: Steptoe & Johnson LLP
- Priority: JP2007-319033 20071211; JP2007-326622 20071219
- Main IPC: H01L23/482
- IPC: H01L23/482 ; H01L23/488 ; H01L21/44
Abstract:
A semiconductor device capable of realizing highly reliable three-dimensional mounting, and a method of manufacturing the same, are provided. A projected electrode 9 is formed in a region outside of an element mounting region of a substrate 5. The projected electrode 9 includes a protruding portion that protrudes from the front face of a molding resin portion 10. The distal end of the protruding portion is a flat face 13. In addition, a portion of the projected electrode 9 whose cross section is larger than the protruding portion is positioned inside the molding resin portion 10.
Public/Granted literature
- US20090146301A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURING THE SAME Public/Granted day:2009-06-11
Information query
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