Invention Grant
- Patent Title: Semiconductor device and method of manufacture thereof
- Patent Title (中): 半导体装置及其制造方法
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Application No.: US13025633Application Date: 2011-02-11
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Publication No.: US08390121B2Publication Date: 2013-03-05
- Inventor: Mika Okumura , Yasuo Yamaguchi , Takeshi Murakami
- Applicant: Mika Okumura , Yasuo Yamaguchi , Takeshi Murakami
- Applicant Address: JP Tokyo
- Assignee: Mitsubishi Electric Corporation
- Current Assignee: Mitsubishi Electric Corporation
- Current Assignee Address: JP Tokyo
- Agency: Oblon, Spivak, McClelland, Maier & Neustadt, L.L.P.
- Priority: JP2010-131964 20100609
- Main IPC: H01L23/482
- IPC: H01L23/482
Abstract:
A semiconductor device includes a substrate, an element formed on the substrate, a nitride film formed on the substrate, a anti-peel film formed on the nitride film, and a molded resin covering the anti-peel film and the element. The anti-peel film has residual compressive stress.
Public/Granted literature
- US20110303992A1 SEMICONDUCTOR DEVICE AND METHOD OF MANUFACTURE THEREOF Public/Granted day:2011-12-15
Information query
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