Invention Grant
US08390129B2 Semiconductor device with a plurality of mark through substrate vias
有权
具有多个通过衬底通孔的标记的半导体器件
- Patent Title: Semiconductor device with a plurality of mark through substrate vias
- Patent Title (中): 具有多个通过衬底通孔的标记的半导体器件
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Application No.: US12945134Application Date: 2010-11-12
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Publication No.: US08390129B2Publication Date: 2013-03-05
- Inventor: Chi-Chih Shen , Jen-Chuan Chen , Hui-Shan Chang , Chung-Hsi Wu , Meng-Jen Wang
- Applicant: Chi-Chih Shen , Jen-Chuan Chen , Hui-Shan Chang , Chung-Hsi Wu , Meng-Jen Wang
- Applicant Address: TW Kaohsiung
- Assignee: Advanced Semiconductor Engineering, Inc
- Current Assignee: Advanced Semiconductor Engineering, Inc
- Current Assignee Address: TW Kaohsiung
- Agency: McCracken & Frank LLC
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40

Abstract:
The present invention relates to a semiconductor device with a plurality of mark through substrate vias, including a semiconductor substrate, a plurality of original through substrate vias and a plurality of mark through substrate vias. The original through substrate vias and the mark through substrate vias are disposed in the semiconductor substrate and protrude from the backside surface of the semiconductor substrate. The mark through substrate vias are added at a specific position and/or in a specific pattern and serve as a fiducial mark, which facilitates identifying the position and direction on the backside surface. Thus, the redistribution layer (RBL) or the special equipment for achieving the backside alignment (BSA) is not necessary.
Public/Granted literature
- US20120119335A1 Semiconductor Device With A Plurality Of Mark Through Substrate Vias Public/Granted day:2012-05-17
Information query
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