Invention Grant
- Patent Title: Semiconductor device with reduced contact resistance
- Patent Title (中): 具有降低接触电阻的半导体器件
-
Application No.: US11890965Application Date: 2007-08-08
-
Publication No.: US08390131B2Publication Date: 2013-03-05
- Inventor: Sven Fuchs , Mark Pavier
- Applicant: Sven Fuchs , Mark Pavier
- Applicant Address: US CA El Segundo
- Assignee: International Rectifier Corporation
- Current Assignee: International Rectifier Corporation
- Current Assignee Address: US CA El Segundo
- Agency: Farjami & Farjami LLP
- Main IPC: H01L23/48
- IPC: H01L23/48 ; H01L23/52 ; H01L29/40
Abstract:
A semiconductor device that includes an electrode of one material and a conductive material of lower resistivity formed over the electrode and a process for fabricating the semiconductor device.
Public/Granted literature
- US20080017987A1 Semiconductor device with reduced contact resistance Public/Granted day:2008-01-24
Information query
IPC分类:
