Invention Grant
- Patent Title: Radio-frequency semiconductor switch
- Patent Title (中): 射频半导体开关
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Application No.: US13467267Application Date: 2012-05-09
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Publication No.: US08390339B2Publication Date: 2013-03-05
- Inventor: Toshiki Seshita
- Applicant: Toshiki Seshita
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Turocy & Watson, LLP
- Priority: JP2009-200193 20090831
- Main IPC: H03K3/00
- IPC: H03K3/00

Abstract:
A semiconductor switch includes: a switch section, provided on a substrate, switching connection states among a plurality of terminals; a positive voltage generator generating a positive potential higher than a supply potential supplied from a power-supply line; a driver, connected to an output line of the positive voltage generator, supplying a control signal to the switch section in response to a terminal switching signal; and a voltage controller, provided on the same substrate, controlling to connect the output line of the positive voltage generator to the power-supply line for a first period corresponding to a change in the connection states, and controlling to disconnect the output line from the power-supply line after the first period.
Public/Granted literature
- US20120218010A1 SEMICONDUCTOR SWITCH Public/Granted day:2012-08-30
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