Invention Grant
- Patent Title: Internal voltage generation circuit for semiconductor apparatus
- Patent Title (中): 半导体装置的内部电压产生电路
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Application No.: US12843995Application Date: 2010-07-27
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Publication No.: US08390364B2Publication Date: 2013-03-05
- Inventor: Ki Han Kim , Hyun Woo Lee , Won Joo Yun
- Applicant: Ki Han Kim , Hyun Woo Lee , Won Joo Yun
- Applicant Address: KR Gyeonggi-do
- Assignee: Hynix Semiconductor Inc.
- Current Assignee: Hynix Semiconductor Inc.
- Current Assignee Address: KR Gyeonggi-do
- Agency: Ladas & Parry LLP
- Priority: KR10-2010-0017289 20100225
- Main IPC: G05F1/10
- IPC: G05F1/10
Abstract:
A semiconductor apparatus for generating an internal voltage includes a control code output block and an internal voltage generation block. The control code output block is configured to output a variable code having a code value corresponding to a voltage level of an internal voltage. The internal voltage generation block is configured to compare the variable code to a setting code and controls the voltage level of the internal voltage according to the comparison.
Public/Granted literature
- US20110204951A1 SEMICONDUCTOR APPARATUS Public/Granted day:2011-08-25
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