Invention Grant
- Patent Title: Semiconductor ceramic and positive-coefficient characteristic thermistor
- Patent Title (中): 半导体陶瓷和正系数特性热敏电阻
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Application No.: US13326706Application Date: 2011-12-15
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Publication No.: US08390421B2Publication Date: 2013-03-05
- Inventor: Atsushi Kishimoto , Wataru Aoto , Akinori Nakayama
- Applicant: Atsushi Kishimoto , Wataru Aoto , Akinori Nakayama
- Applicant Address: JP Nagaokakyo-Shi, Kyoto-fu
- Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee: Murata Manufacturing Co., Ltd.
- Current Assignee Address: JP Nagaokakyo-Shi, Kyoto-fu
- Agency: Dickstein Shapiro LLP
- Priority: JP2009-156916 20090701
- Main IPC: H01C7/10
- IPC: H01C7/10

Abstract:
A semiconductor ceramic and a positive-coefficient characteristic thermistor are provided which have a stable PTC characteristic, a high double point, and a wide operating temperature range. The semiconductor ceramic contains, as a main component, a barium titanate-based composition having a perovskite structure expressed by a general formula AmBO3. Out of 100 mol % of the Ti, an amount in a range of 0.05 mol % or more to 0.3 mol % or less of Ti is replaced with W as a semiconductor forming agent, the ratio m of A sites mainly to B sites is 0.99≦m≦1.002, and an actually-measured sintered density is 70% or more and 90% or less of the theoretical sintered density. In the positive-coefficient characteristic thermistor, a component body is formed of the semiconductor ceramic.
Public/Granted literature
- US20120081206A1 SEMICONDUCTOR CERAMIC AND POSITIVE-COEFFICIENT CHARACTERISTIC THERMISTOR Public/Granted day:2012-04-05
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