Invention Grant
- Patent Title: Nanoflat resistor
- Patent Title (中): 纳米电阻
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Application No.: US13321461Application Date: 2009-05-19
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Publication No.: US08390423B2Publication Date: 2013-03-05
- Inventor: Arjang Fartash , Peter Mardilovich
- Applicant: Arjang Fartash , Peter Mardilovich
- Applicant Address: US TX Houston
- Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee: Hewlett-Packard Development Company, L.P.
- Current Assignee Address: US TX Houston
- International Application: PCT/US2009/044570 WO 20090519
- International Announcement: WO2010/134910 WO 20101125
- Main IPC: H01C1/012
- IPC: H01C1/012

Abstract:
A nanoflat resistor includes a first aluminum electrode (360), a second aluminum electrode (370); andnanoporous alumina (365) separating the first and second aluminum electrodes (360, 370). A substantially planar resistor layer (330) overlies the first and second aluminum electrodes (360, 370) and nanoporous alumina (365). Electrical current passes from the first aluminum electrode (360), through a portion of the planar resistor layer (350) overlying the nanoporous alumina (365) and into the second aluminum electrode (370). A method for constructing a nanoflat resistor (390) is also provided.
Public/Granted literature
- US20120062355A1 NANOFLAT RESISTOR Public/Granted day:2012-03-15
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