Invention Grant
- Patent Title: Protection for an integrated circuit
- Patent Title (中): 保护集成电路
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Application No.: US13063189Application Date: 2009-09-09
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Publication No.: US08390971B2Publication Date: 2013-03-05
- Inventor: Hans-Martin Ritter , Ingo Laasch
- Applicant: Hans-Martin Ritter , Ingo Laasch
- Applicant Address: NL Eindhoven
- Assignee: NXP B.V.
- Current Assignee: NXP B.V.
- Current Assignee Address: NL Eindhoven
- Priority: EP08105316 20080911
- International Application: PCT/IB2009/053942 WO 20090909
- International Announcement: WO2010/029503 WO 20100318
- Main IPC: H02H3/20
- IPC: H02H3/20 ; H02H3/22 ; H02H9/00
Abstract:
The present invention relates to a discharge structure for an overvoltage and/or overcurrent protection, in particular to a discharge structure for an electrostatic discharge (ESD) protection, for an integrated circuit (IC), and to an ESD protection device for an IC comprising such a discharge structure and to a method for making such a structure. The present invention particularly relates to such a discharge structure (50, 52) which comprises at least two discharge paths (40, 80) provided to conduct a current to a terminal (60), whereas substantially all of the discharge paths (40, 80) present substantially the same resistance for the current.
Public/Granted literature
- US20110216459A1 PROTECTION FOR AN INTEGRATED CIRCUIT Public/Granted day:2011-09-08
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