Invention Grant
- Patent Title: Switch and method of forming the same
- Patent Title (中): 开关及其形成方法
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Application No.: US12533581Application Date: 2009-07-31
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Publication No.: US08391057B2Publication Date: 2013-03-05
- Inventor: Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Yong-Hyun Kwon , Weon-Wi Jang , Keun-Hwi Cho
- Applicant: Min-Sang Kim , Ji-Myoung Lee , Hyun-Jun Bae , Dong-Won Kim , Jun Seo , Yong-Hyun Kwon , Weon-Wi Jang , Keun-Hwi Cho
- Applicant Address: KR Suwon-Si, Gyeonggi-Do
- Assignee: Samsung Electronics Co., Ltd.
- Current Assignee: Samsung Electronics Co., Ltd.
- Current Assignee Address: KR Suwon-Si, Gyeonggi-Do
- Agency: F. Chau & Associates, LLC.
- Priority: KR2008-0121327 20081202
- Main IPC: G11C11/50
- IPC: G11C11/50 ; H01L27/108
Abstract:
A memory device includes a memory cell that includes a storage node, a first electrode, and a second electrode, the storage node stores an electrical charge, and the first electrode moves to connect to the storage node when the second electrode is energized.
Public/Granted literature
- US20100135064A1 SWITCH AND METHOD OF FORMING THE SAME Public/Granted day:2010-06-03
Information query
