Invention Grant
US08391347B2 Decision feedback equalizer (DFE) circuits for use in a semiconductor memory device and initializing method thereof
有权
用于半导体存储器件的判决反馈均衡器(DFE)电路及其初始化方法
- Patent Title: Decision feedback equalizer (DFE) circuits for use in a semiconductor memory device and initializing method thereof
- Patent Title (中): 用于半导体存储器件的判决反馈均衡器(DFE)电路及其初始化方法
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Application No.: US12261814Application Date: 2008-10-30
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Publication No.: US08391347B2Publication Date: 2013-03-05
- Inventor: Kyung-Hyun Kim , Yongsam Moon
- Applicant: Kyung-Hyun Kim , Yongsam Moon
- Applicant Address: KR Suwon-si
- Assignee: Samsung Electronics Co., Ltd
- Current Assignee: Samsung Electronics Co., Ltd
- Current Assignee Address: KR Suwon-si
- Agency: Stanzione & Kim, LLP
- Priority: KR10-2007-0109939 20071031
- Main IPC: H03H7/40
- IPC: H03H7/40 ; H04M1/64

Abstract:
A DFE circuit for use in a semiconductor memory device and an initializing method thereof. In the method of initializing a DFE circuit used in a semiconductor memory device having a discontinuous data transmission, the DFE circuit may be used for changing a sampling reference level in response to a level of previous data and sampling transmission data. The method includes terminating a data channel having a transmission of the transmission data at a predefined termination level, and controlling a sampling start time point of the transmission data as a time point preceding a transmission time point of the transmission data by a predefined time. Further, an initialization may be performed of the previous data on the basis of initialization data obtained through a pre-sampling of the data channel at a sampling start time point of the transmission data, thereby obtaining an initialization of the DFE circuit and compensating for a feedback delay.
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