Various methods and apparatuses are described for a power distribution structure. In an embodiment, an integrated circuit contains power gating cells that each contain Metal Oxide Semiconductor (MOS) device switches located relative in the power distribution structure to power up and down a block of logic containing a plurality of individual cells using these MOS device switches. The MOS device switches can be tuned to requirements of a target block of logic in order to meet its optimal voltage drop requirements during its active operational state while minimizing leakage current in its off state.