Invention Grant
- Patent Title: Substrate processing method, and method of manufacturing semiconductor device
- Patent Title (中): 基板加工方法及半导体装置的制造方法
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Application No.: US13076861Application Date: 2011-03-31
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Publication No.: US08393091B2Publication Date: 2013-03-12
- Inventor: Tomokazu Kawamoto
- Applicant: Tomokazu Kawamoto
- Applicant Address: JP Yokohama
- Assignee: Fujitsu Semiconductor Limited
- Current Assignee: Fujitsu Semiconductor Limited
- Current Assignee Address: JP Yokohama
- Agency: Fujitsu Patent Center
- Priority: JP2007-040322 20070221
- Main IPC: F26B11/00
- IPC: F26B11/00
Abstract:
There is disclosed a substrate processing apparatus including a processing chamber housing a substrate, pipes for supplying gas into the processing chamber, and heaters provided in the middle of the pipes, and heating the gas. In the substrate processing apparatus, the heaters heat the gas to a temperature lower than a temperature at which exhaust gas is generated from the pipes to dry the substrate in the heated gas.
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