Invention Grant
- Patent Title: Silica glass crucible for pulling up silicon single crystal and method for manufacturing thereof
- Patent Title (中): 用于提升硅单晶的硅玻璃坩埚及其制造方法
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Application No.: US12626713Application Date: 2009-11-27
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Publication No.: US08394198B2Publication Date: 2013-03-12
- Inventor: Masaki Morikawa , Jun Furukawa , Satoshi Kudo
- Applicant: Masaki Morikawa , Jun Furukawa , Satoshi Kudo
- Applicant Address: JP Akita-Shi
- Assignee: Japan Super Quartz Corporation
- Current Assignee: Japan Super Quartz Corporation
- Current Assignee Address: JP Akita-Shi
- Agency: Greenblum & Bernstein, P.L.C.
- Priority: JP2008-305329 20081128
- Main IPC: C30B15/02
- IPC: C30B15/02

Abstract:
A silica glass crucible for pulling up a silicon single crystal including a wall part, a corner part and a bottom part is provided with an outer layer formed from an opaque silica glass layer which includes many bubbles, and an inner layer formed from a transparent silica glass layer which substantially does not include bubbles, wherein at least one part of an inner surface of the wall part and the corner part being an uneven surface formed with multiple damaged parts having a depth of 50 μm or more and 450 μm or less, and wherein a region among the inner surface of the bottom part within a certain range from the center of the bottom part being a smooth surface which does is substantially not formed with damage.
Public/Granted literature
- US20100132608A1 SILICA GLASS CRUCIBLE FOR PULLING UP SILICON SINGLE CRYSTAL AND METHOD FOR MANUFACTURING THEREOF Public/Granted day:2010-06-03
Information query
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