Invention Grant
- Patent Title: Plasma processing apparatus
- Patent Title (中): 等离子体处理装置
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Application No.: US12161238Application Date: 2007-03-13
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Publication No.: US08394230B2Publication Date: 2013-03-12
- Inventor: Kazuyuki Tezuka
- Applicant: Kazuyuki Tezuka
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2006-078127 20060322
- International Application: PCT/JP2007/054941 WO 20070313
- International Announcement: WO2007/108366 WO 20070927
- Main IPC: C23C16/00
- IPC: C23C16/00 ; C23C16/50 ; C23F1/00 ; H01L21/306
Abstract:
A plasma processing apparatus is provided with a replacement time detecting unit, which detects the status of residual charges which attract a semiconductor wafer and detects a time when an electrostatic chuck is to be replaced, at a time when a direct voltage application from a direct current source is stopped and the semiconductor wafer is brought up from the electrostatic chuck.
Public/Granted literature
- US20100218895A1 PLASMA PROCESSING APPARATUS Public/Granted day:2010-09-02
Information query
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