Invention Grant
- Patent Title: Plasma process device and plasma process method
- Patent Title (中): 等离子体工艺装置和等离子体处理方法
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Application No.: US11656379Application Date: 2007-01-23
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Publication No.: US08394231B2Publication Date: 2013-03-12
- Inventor: Koichi Takatsuki , Hikaru Yoshitaka , Shigeo Ashigaki , Yoichi Inoue , Takashi Akahori , Shuuichi Ishizuka , Syoichi Abe , Takashi Suzuki , Kohei Kawamura , Hidenori Miyoshi , Gishi Chung , Yasuhiro Oshima , Hiroyuki Takahashi
- Applicant: Koichi Takatsuki , Hikaru Yoshitaka , Shigeo Ashigaki , Yoichi Inoue , Takashi Akahori , Shuuichi Ishizuka , Syoichi Abe , Takashi Suzuki , Kohei Kawamura , Hidenori Miyoshi , Gishi Chung , Yasuhiro Oshima , Hiroyuki Takahashi
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Crowell & Moring LLP
- Priority: JP2001-13572 20010122; JP2001-13574 20010122; JP2001-239720 20010807
- Main IPC: C23F1/00
- IPC: C23F1/00 ; H01L21/306 ; C23C16/00 ; H05H1/24 ; H01J7/24
Abstract:
That surface of an electrode plate 20 which is opposite to a susceptor 10 has a projection shape. The electrode plate 20 is fitted in an opening 26a of shield ring 26 at a projection 20a. At this time, the thickness of the projection 20a is approximately the same as the thickness of the shield ring 26. Accordingly, the electrode plate 20 and the shield ring 26 form substantially the same plane. The major surface of the projection 20a has a diameter 1.2 to 1.5 times the diameter of a wafer W. The electrode plate 20 is formed of, for example, SiC.
Public/Granted literature
- US20070131171A1 Plasma process device and plasma process method Public/Granted day:2007-06-14
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