Invention Grant
US08394569B2 Resist composition for immersion lithography and method for forming resist pattern
有权
浸渍光刻用抗蚀剂组合物和形成抗蚀剂图案的方法
- Patent Title: Resist composition for immersion lithography and method for forming resist pattern
- Patent Title (中): 浸渍光刻用抗蚀剂组合物和形成抗蚀剂图案的方法
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Application No.: US12278376Application Date: 2007-02-05
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Publication No.: US08394569B2Publication Date: 2013-03-12
- Inventor: Makiko Irie , Takeshi Iwai
- Applicant: Makiko Irie , Takeshi Iwai
- Applicant Address: JP Kawasaki-shi
- Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee: Tokyo Ohka Kogyo Co., Ltd.
- Current Assignee Address: JP Kawasaki-shi
- Agency: Knobbe Martens Olson & Bear LLP
- Priority: JP2006-041116 20060217; JP2006-122330 20060426
- International Application: PCT/JP2007/051945 WO 20070205
- International Announcement: WO2007/094192 WO 20070823
- Main IPC: G03F7/028
- IPC: G03F7/028 ; G03F7/033 ; G03F7/038 ; G03F7/26
Abstract:
A resist composition for immersion lithography of the present invention includes a resin component (A) which exhibits changed alkali solubility under the action of acid; and an acid generator component (B) which generates acid on exposure, wherein the resin component (A) includes a resin (A1) containing a fluorine atom and no acid-dissociable group, and a resin (A2) containing a structural unit (a′) derived from an acrylic acid and no fluorine atom.
Public/Granted literature
- US20090042132A1 RESIST COMPOSITION FOR IMMERSION LITHOGRAPHY AND METHOD FOR FORMING RESIST PATTERN Public/Granted day:2009-02-12
Information query
IPC分类:
