Invention Grant
- Patent Title: Method of production of a magnetoresistance effect device
- Patent Title (中): 制造磁阻效应器件的方法
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Application No.: US11969049Application Date: 2008-01-03
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Publication No.: US08394649B2Publication Date: 2013-03-12
- Inventor: David D. Djayaprawira , Koji Tsunekawa , Motonobu Nagai , Hiroki Maehara , Shinji Yamagata , Naoki Watanabe , Shinji Yuasa
- Applicant: David D. Djayaprawira , Koji Tsunekawa , Motonobu Nagai , Hiroki Maehara , Shinji Yamagata , Naoki Watanabe , Shinji Yuasa
- Applicant Address: JP Kanagawa JP Ibaraki
- Assignee: Canaon Anelva Corporation,National Institute of Advanced Industrial Science and Technology
- Current Assignee: Canaon Anelva Corporation,National Institute of Advanced Industrial Science and Technology
- Current Assignee Address: JP Kanagawa JP Ibaraki
- Agency: Buchanan Ingersoll & Rooney PC
- Priority: JP2004-259280 20040907
- Main IPC: H01L21/00
- IPC: H01L21/00
Abstract:
A magnetoresistance effect device including a multilayer structure having a pair of ferromagnetic layers and a barrier layer positioned between them, wherein at least one ferromagnetic layer has at least the part contacting the barrier layer made amorphous and the barrier layer is an MgO layer having a highly oriented texture structure.
Public/Granted literature
- US20080124454A1 Method Of Production Of A Magnetoresistance Effect Device Public/Granted day:2008-05-29
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