Invention Grant
US08394656B2 Method of creating MEMS device cavities by a non-etching process
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通过非蚀刻工艺制造MEMS器件腔的方法
- Patent Title: Method of creating MEMS device cavities by a non-etching process
- Patent Title (中): 通过非蚀刻工艺制造MEMS器件腔的方法
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Application No.: US12831898Application Date: 2010-07-07
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Publication No.: US08394656B2Publication Date: 2013-03-12
- Inventor: Chun-Ming Wang , Jeffrey Lan , Teruo Sasagawa
- Applicant: Chun-Ming Wang , Jeffrey Lan , Teruo Sasagawa
- Applicant Address: US CA San Diego
- Assignee: Qualcomm MEMS Technologies, Inc.
- Current Assignee: Qualcomm MEMS Technologies, Inc.
- Current Assignee Address: US CA San Diego
- Agency: Knobbe, Martens, Olson & Bear LLP
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
MEMS devices (such as interferometric modulators) may be fabricated using a sacrificial layer that contains a heat vaporizable polymer to form a gap between a moveable layer and a substrate. One embodiment provides a method of making a MEMS device that includes depositing a polymer layer over a substrate, forming an electrically conductive layer over the polymer layer, and vaporizing at least a portion of the polymer layer to form a cavity between the substrate and the electrically conductive layer. Another embodiment provides a method for making an interferometric modulator that includes providing a substrate, depositing a first electrically conductive material over at least a portion of the substrate, depositing a sacrificial material over at least a portion of the first electrically conductive material, depositing an insulator over the substrate and adjacent to the sacrificial material to form a support structure, and depositing a second electrically conductive material over at least a portion of the sacrificial material, the sacrificial material being removable by heat-vaporization to thereby form a cavity between the first electrically conductive layer and the second electrically conductive layer.
Public/Granted literature
- US20100271688A1 METHOD OF CREATING MEMS DEVICE CAVITIES BY A NON-ETCHING PROCESS Public/Granted day:2010-10-28
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