Invention Grant
- Patent Title: Vertical diodes for non-volatile memory device
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Application No.: US13149807Application Date: 2011-05-31
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Publication No.: US08394670B2Publication Date: 2013-03-12
- Inventor: Scott Brad Herner
- Applicant: Scott Brad Herner
- Applicant Address: US CA Santa Clara
- Assignee: Crossbar, Inc.
- Current Assignee: Crossbar, Inc.
- Current Assignee Address: US CA Santa Clara
- Agency: Ogawa P.C.
- Main IPC: H01L29/02
- IPC: H01L29/02 ; H01L45/00
Abstract:
A steering device. The steering device includes an n-type impurity region comprising a zinc oxide material and a p-type impurity region comprising a silicon germanium material. A pn junction region formed from the zinc oxide material and the silicon germanium material. The steering device is a serially coupled to a resistive switching device to provide rectification for the resistive switching device to form a non-volatile memory device.
Public/Granted literature
- US20120305874A1 Vertical Diodes for Non-Volatile Memory Device Public/Granted day:2012-12-06
Information query
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