Invention Grant
- Patent Title: Semiconductor device
- Patent Title (中): 半导体器件
-
Application No.: US13460269Application Date: 2012-04-30
-
Publication No.: US08394673B2Publication Date: 2013-03-12
- Inventor: Gerhard Josef Poeppel , Irmgard Escher-Poeppel
- Applicant: Gerhard Josef Poeppel , Irmgard Escher-Poeppel
- Applicant Address: DE Neubiberg
- Assignee: Infineon Technologies AG
- Current Assignee: Infineon Technologies AG
- Current Assignee Address: DE Neubiberg
- Agency: Dicke, Billig & Czaja, PLLC
- Main IPC: H01L21/00
- IPC: H01L21/00

Abstract:
A method of manufacturing a semiconductor device is disclosed. One embodiment includes placing multiple semiconductor chips onto a carrier, each of the semiconductor chips having a first face and a second face opposite to the first face. An encapsulation material is applied over the multiple semiconductor chips and the carrier to form an encapsulating body having a first face facing the carrier and a second face opposite to the first face. A redistribution layer is applied over the multiple semiconductor chips and the first face of the encapsulating body. An array of external contact elements are applied to the second face of the encapsulating body.
Public/Granted literature
- US20120214277A1 SEMICONDUCTOR DEVICE Public/Granted day:2012-08-23
Information query
IPC分类: