Invention Grant
- Patent Title: Semiconductor device and fabrication method thereof
- Patent Title (中): 半导体器件及其制造方法
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Application No.: US13546222Application Date: 2012-07-11
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Publication No.: US08394690B2Publication Date: 2013-03-12
- Inventor: Keiji Ikeda , Tsutomu Tezuka , Yoshihiko Moriyama
- Applicant: Keiji Ikeda , Tsutomu Tezuka , Yoshihiko Moriyama
- Applicant Address: JP Tokyo
- Assignee: Kabushiki Kaisha Toshiba
- Current Assignee: Kabushiki Kaisha Toshiba
- Current Assignee Address: JP Tokyo
- Agency: Finnegan, Henderson, Farabow, Garrett & Dunner, L.L.P.
- Priority: JP2010-012528 20100122
- Main IPC: H01L21/336
- IPC: H01L21/336
Abstract:
According to one embodiment, a semiconductor device having a Ge- or SiGe-fin structure includes a convex-shaped active area formed along one direction on the surface region of a Si substrate, a buffer layer of Si1-xGex (0
Public/Granted literature
- US20120276712A1 SEMICONDUCTOR DEVICE AND FABRICATION METHOD THEREOF Public/Granted day:2012-11-01
Information query
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