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Invention Grant
US08394695B2 Semiconductor device production method 有权
半导体器件生产方法

  • Patent Title: Semiconductor device production method
  • Patent Title (中): 半导体器件生产方法
  • Application No.: US13205970
    Application Date: 2011-08-09
  • Publication No.: US08394695B2
    Publication Date: 2013-03-12
  • Inventor: Takamitsu Yamanaka
  • Applicant: Takamitsu Yamanaka
  • Applicant Address: JP Kyoto
  • Assignee: Rohm Co., Ltd.
  • Current Assignee: Rohm Co., Ltd.
  • Current Assignee Address: JP Kyoto
  • Agency: Rabin & Berdo, P.C.
  • Priority: JP2004-237207 20040817; JP2004-237208 20040817; JP2004-237209 20040817; JP2004-237210 20040817; JP2004-237211 20040817
  • Main IPC: H01L21/8238
  • IPC: H01L21/8238
Semiconductor device production method
Abstract:
This semiconductor device includes a first device and a second device provided on a semiconductor substrate and having different breakdown voltages. More specifically, the semiconductor device includes a semiconductor substrate, a first region defined on the semiconductor substrate and having a first device formation region isolated by a device isolation portion formed by filling an insulator in a trench formed in the semiconductor substrate, a first device provided in the first device formation region, a second region defined on the semiconductor substrate separately from the first region and having a second device formation region, and a second device provided in the second device formation region and having a higher breakdown voltage than the first device, the second device having a drift drain structure in which a LOCOS oxide film thicker than a gate insulation film thereof is disposed at an edge of a gate electrode thereof.
Abstract(Chinese):

该半导体器件包括设置在半导体衬底上并具有不同击穿电压的第一器件和第二器件。 更具体地说，半导体器件包括半导体衬底，第一区域限定在半导体衬底上并且具有第一器件形成区域，该第一器件形成区域由通过在形成于半导体衬底中的沟槽中填充绝缘体而形成的器件隔离部分隔离，第一器件提供 在所述第一器件形成区域中，与所述第一区域分开限定在所述半导体衬底上并具有第二器件形成区域的第二区域和设置在所述第二器件形成区域中并且具有比所述第一器件更高的击穿电压的第二器件， 所述第二器件具有漂移漏极结构，其中比其栅极绝缘膜厚的LOCOS氧化物膜设置在其栅电极的边缘处。

Public/Granted literature
Information query
Espacenet
IPC分类:
H 电学
H01 基本电气元件
H01L 半导体器件；其他类目中不包括的电固体器件（使用半导体器件的测量入G01；一般电阻器入H01C；磁体、电感器、变压器入H01F；一般电容器入H01G；电解型器件入H01G9/00；电池组、蓄电池入H01M；波导管、谐振器或波导型线路入H01P；线路连接器、汇流器入H01R；受激发射器件入H01S；机电谐振器入H03H；扬声器、送话器、留声机拾音器或类似的声机电传感器入H04R；一般电光源入H05B；印刷电路、混合电路、电设备的外壳或结构零部件、电气元件的组件的制造入H05K；在具有特殊应用的电路中使用的半导体器件见应用相关的小类）
H01L21/00 专门适用于制造或处理半导体或固体器件或其部件的方法或设备
H01L21/70 .由在一共用基片内或其上形成的多个固态组件或集成电路组成的器件或其部件的制造或处理；集成电路器件或其特殊部件的制造（由预制电组件组成的组装件的制造入H05K3/00，H05K13/00）
H01L21/77 ..在公共衬底中或上面形成的由许多固态元件或集成电路组成的器件的制造或处理（电可编程只读存储器或其多步骤的制造方法入H01L27/115）
H01L21/78 ...把衬底连续地分成多个独立的器件（改变表面物理特性或者半导体形状的切割入H01L21/304）
H01L21/82 ....制造器件，例如每一个由许多元件组成的集成电路
H01L21/822 .....衬底是采用硅工艺的半导体的（H01L21/8258优先）
H01L21/8232 ......场效应工艺
H01L21/8234 .......MIS工艺
H01L21/8238 ........互补场效应晶体管，例如CMOS
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