Invention Grant
US08394703B2 Manufacturing method of SOI substrate and manufacturing method of semiconductor device
有权
SOI衬底的制造方法和半导体器件的制造方法
- Patent Title: Manufacturing method of SOI substrate and manufacturing method of semiconductor device
- Patent Title (中): SOI衬底的制造方法和半导体器件的制造方法
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Application No.: US12634107Application Date: 2009-12-09
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Publication No.: US08394703B2Publication Date: 2013-03-12
- Inventor: Hideto Ohnuma , Junpei Momo , Shunpei Yamazaki
- Applicant: Hideto Ohnuma , Junpei Momo , Shunpei Yamazaki
- Applicant Address: JP Atsugi-shi, Kanagawa-ken
- Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee: Semiconductor Energy Laboratory Co., Ltd.
- Current Assignee Address: JP Atsugi-shi, Kanagawa-ken
- Agency: Robinson Intellectual Property Law Office, P.C.
- Agent Eric J. Robinson
- Priority: JP2008-318377 20081215
- Main IPC: H01L21/762
- IPC: H01L21/762
Abstract:
When the single crystal semiconductor layer is melted, the outward diffusion of oxygen is promoted. Specifically, an SOI substrate is formed in such a manner that an SOI structure having a bonding layer including oxygen provided over a base substrate and a single crystal semiconductor layer provided over the bonding layer including oxygen is formed, and part of the single crystal semiconductor layer is melted by irradiation with a laser beam in a state that the base substrate is heated at a temperature of higher than or equal to 500° C. and lower than a melting point of the base substrate.
Public/Granted literature
- US20100151663A1 MANUFACTURING METHOD OF SOI SUBSTRATE AND MANUFACTURING METHOD OF SEMICONDUCTOR DEVICE Public/Granted day:2010-06-17
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