Invention Grant
- Patent Title: Method of improving adhesion of bond pad over pad metallization with a neighboring passivation layer by depositing a palladium layer
- Patent Title (中): 通过沉积钯层来改善焊垫金属化与相邻钝化层之间粘附的方法
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Application No.: US12705021Application Date: 2010-02-12
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Publication No.: US08394713B2Publication Date: 2013-03-12
- Inventor: Varughese Mathew
- Applicant: Varughese Mathew
- Applicant Address: US TX Austin
- Assignee: Freescale Semiconductor, Inc.
- Current Assignee: Freescale Semiconductor, Inc.
- Current Assignee Address: US TX Austin
- Agent Robert L. King; Jonathan N. Geld
- Main IPC: H01L21/445
- IPC: H01L21/445

Abstract:
A semiconductor device structure has a semiconductor die that has a bond pad with a passivation layer surrounding a portion of the bond pad. A nickel layer, which is deposited, is on the inner portion. A space is between a sidewall of the nickel layer and the passivation layer and extends to the bond pad. A palladium layer is over the nickel layer and fills the space. The space is initially quite small but is widened by an isotropic etch so that when the palladium layer is deposited, the space is sufficiently large so that the deposition of palladium is able to fill the space. Filling the space results in a structure in which the palladium contacts the nickel layer, the passivation layer and the bond pad.
Public/Granted literature
- US20110198751A1 BOND PAD WITH MULTIPLE LAYER OVER PAD METALLIZATION AND METHOD OF FORMATION Public/Granted day:2011-08-18
Information query
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