Invention Grant
- Patent Title: Plasma processing method and resist pattern modifying method
- Patent Title (中): 等离子体处理方法和抗蚀剂图案修饰方法
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Application No.: US12553611Application Date: 2009-09-03
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Publication No.: US08394720B2Publication Date: 2013-03-12
- Inventor: Jin Fujihara
- Applicant: Jin Fujihara
- Applicant Address: JP Tokyo
- Assignee: Tokyo Electron Limited
- Current Assignee: Tokyo Electron Limited
- Current Assignee Address: JP Tokyo
- Agency: Rothwell, Figg, Ernst & Manbeck, P.C.
- Priority: JP2008-226949 20080904
- Main IPC: H01L21/311
- IPC: H01L21/311
Abstract:
A plasma processing method includes modifying a resist pattern of the substrate; and trimming the modified resist pattern through a plasma etching. The modifying includes: supplying the processing gas for modification from the processing gas supply unit to the inside of the processing chamber while the substrate having a surface on which the resist pattern is formed is mounted on the lower electrode; supplying the high frequency power from the high frequency power supply to generate a plasma of the processing gas for modification; and supplying the negative DC voltage from the DC power supply to the upper electrode.
Public/Granted literature
- US20100055911A1 PLASMA PROCESSING METHOD AND RESIST PATTERN MODIFYING METHOD Public/Granted day:2010-03-04
Information query
IPC分类:
